Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: MOSpipeDescription: N-Channel 40V (D-S) 200DEG.C MOSFET16805+$25.507250+$24.4171200+$23.8067500+$23.65411000+$23.50152500+$23.32715000+$23.21817500+$23.1091 -
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Category: MOSpipeDescription: N-Channel 40V (D-S) 200DEG.C MOSFET81745+$25.507250+$24.4171200+$23.8067500+$23.65411000+$23.50152500+$23.32715000+$23.21817500+$23.1091 -
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Category: MOSpipeDescription: MOSFET N-CH 40V 110A D2PAK92585+$27.888150+$26.6963200+$26.0289500+$25.86211000+$25.69522500+$25.50455000+$25.38537500+$25.2662 -
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Category: JFETtransistorDescription: VISHAY SST5485-E3 JFET Transistor, Junction Field Effect, -25V, 4mA, 10mA, -4V, TO-236, JFET27315+$3.522225+$3.261350+$3.0786100+$3.0004500+$2.94822500+$2.88295000+$2.856910000+$2.8177 -
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Category: JFETtransistorDescription: VISHAY SST5484-E3 JFET Transistor, Junction Field Effect, -25V, 1mA, 5mA, -3V, TO-236, JFET30495+$2.737825+$2.535050+$2.3930100+$2.3322500+$2.29162500+$2.24095000+$2.220710000+$2.1902 -
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Category: JFETtransistorDescription: VISHAY SST174-E3 Transistor, JFET, JFET, 30 V, -20 mA, -135 mA, 10 V, TO-236, JFET55865+$3.591025+$3.325050+$3.1388100+$3.0590500+$3.00582500+$2.93935000+$2.912710000+$2.8728 -
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Category: JFETtransistorDescription: VISHAY SST4416-E3 Transistor, JFET, JFET, 30 V, 15 mA, 15 mA, 6 V, TO-236, JFET35715+$3.933925+$3.642550+$3.4385100+$3.3511500+$3.29282500+$3.22005000+$3.190810000+$3.1471 -
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Category: JFETtransistorDescription: VISHAY SST204-E3 Transistor, Field Effect Transistor, JFET, N-channel, 3MA, TO-23643265+$3.365625+$3.116350+$2.9417100+$2.8670500+$2.81712500+$2.75485000+$2.729810000+$2.6924 -
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Category: JFETtransistorDescription: Trans JFET N-CH 3Pin TO-236881110+$1.078750+$1.0227100+$0.9828300+$0.9588500+$0.93481000+$0.91092500+$0.87495000+$0.8669 -
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Category: JFETtransistorDescription: Transistor, JFET, -40V, TO-236, whole roll67675+$5.131425+$4.751350+$4.4852100+$4.3712500+$4.29512500+$4.20015000+$4.162110000+$4.1051 -
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Category: MOSpipeDescription: VISHAY SQ2319ES-T1-GE3 Transistor, MOSFET, P-channel, -4.6 A, -40 V, 0.061 ohm, -10 V, -2 V75345+$3.237325+$2.997550+$2.8296100+$2.7577500+$2.70972500+$2.64985000+$2.625810000+$2.5898 -
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Category: MOSpipeDescription: P Channel MOSFET, 8V to 20V, Vishay Semiconductor # # MOSFET transistor, Vishay Semiconductor32785+$2.561025+$2.371350+$2.2385100+$2.1816500+$2.14362500+$2.09625000+$2.077210000+$2.0488 -
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Category: MOSpipeDescription: VISHAY SI2314EDS-T1-E3 Transistor, MOSFET, N-channel, 4.9 A, 20 V, 33 Mohm, 4.5 V, 950 mV75035+$2.315325+$2.143850+$2.0237100+$1.9723500+$1.93802500+$1.89515000+$1.877910000+$1.8522 -
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Category: MOSpipeDescription: VISHAY SI2306BDS-T1-E3 Transistor, MOSFET, N-channel, 4 A, 30 V, 0.038 ohm, 10 V, 3 V333810+$0.981550+$0.9306100+$0.8942300+$0.8724500+$0.85061000+$0.82882500+$0.79615000+$0.7888 -
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Category: MOSpipeDescription: VISHAY SI2316BDS-T1-GE3 Field effect transistor, MOSFET, N-channel, 30V, 4.5A, TO-23662245+$1.786125+$1.653850+$1.5611100+$1.5215500+$1.49502500+$1.46195000+$1.448710000+$1.4288 -
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Category: MOSpipeDescription: 60V, N-Channel 220MOHM 4.5V Rated MOSFET36445+$2.158725+$1.998850+$1.8868100+$1.8389500+$1.80692500+$1.76695000+$1.750910000+$1.7269 -
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Category: MOSpipeDescription: N-CHANNEL 40V (D-S) MOSFET15195+$1.373025+$1.271350+$1.2001100+$1.1696500+$1.14922500+$1.12385000+$1.113610000+$1.0984 -
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Category: TVSdiodeDescription: NXP MMBZ5V6AL Static protection device, TVS, 8 V, TO-236AB, 3 pins, 900 mV, 290 mW424620+$0.363250+$0.3363100+$0.3228300+$0.3120500+$0.30401000+$0.29865000+$0.293210000+$0.2878 -
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Category: TVSdiodeDescription: NXP MMBZ27VAL Static protection device, TVS, 40 V, TO-236AB, 3 pins, 900 mV, 360 mW169120+$0.352450+$0.3263100+$0.3132300+$0.3028500+$0.29491000+$0.28975000+$0.284510000+$0.2793 -
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Category: TVSdiodeDescription: MMBZ Series, low capacitance dual channel ESD protection diode, unidirectional dual channel electrostatic discharge (ESD) protection diode, common anode configuration, using SOT23 (TO-236AB) small surface mount device (SMD) plastic packaging. ###Transient voltage suppressor, NXP894620+$0.499550+$0.4625100+$0.4440300+$0.4292500+$0.41811000+$0.41075000+$0.403310000+$0.3959 -
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Category: TVSdiodeDescription: MMBZ Series, low capacitance dual channel ESD protection diode, unidirectional dual channel electrostatic discharge (ESD) protection diode, common anode configuration, using SOT23 (TO-236AB) small surface mount device (SMD) plastic packaging. ###Transient voltage suppressor, NXP340910+$0.911350+$0.8640100+$0.8303300+$0.8100500+$0.78981000+$0.76952500+$0.73915000+$0.7324 -
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Category: Bipolar transistorDescription: Low saturation voltage PNP transistors, Nexperia's series of NXP BISS (small signal breakthrough) low saturation voltage PNP bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, Nexperia44225+$2.546125+$2.357550+$2.2255100+$2.1689500+$2.13122500+$2.08405000+$2.065210000+$2.0369 -
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Category: TVSdiodeDescription: NXP MMBZ15VAL Static protection device, TVS, 21 V, TO-236AB, 3 pins, 900 mV, 360 mW585720+$0.432050+$0.4000100+$0.3840300+$0.3712500+$0.36161000+$0.35525000+$0.348810000+$0.3424 -
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Category: Schottky diodeDescription: Schottky barrier diode, 1A to 1.5A, Nexperia efficient ultra small thin surface mount package optimized for low forward voltage drop, high junction temperature, low capacitance, negligible power switching loss, low leakage current698920+$0.580550+$0.5375100+$0.5160300+$0.4988500+$0.48591000+$0.47735000+$0.468710000+$0.4601 -
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Category: Schottky diodeDescription: Schottky barrier diode, 200mA to 500mA, Nexperia efficient ultra small thin surface mount package optimized for low forward voltage drop, high junction temperature, low capacitance, negligible power switching loss, low leakage current74445+$2.015625+$1.866350+$1.7617100+$1.7170500+$1.68712500+$1.64985000+$1.634810000+$1.6124 -
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Category: Schottky diodeDescription: Schottky barrier diode, 200mA to 500mA, Nexperia efficient ultra small thin surface mount package optimized for low forward voltage drop, high junction temperature, low capacitance, negligible power switching loss, low leakage current9297 -
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Category: Bipolar transistorDescription: Low saturation voltage NPN transistors, Nexperia's series of NXP BISS (small signal breakthrough) low saturation voltage NPN bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, Nexperia49555+$2.300425+$2.130050+$2.0107100+$1.9596500+$1.92552500+$1.88295000+$1.865910000+$1.8403 -
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Category: MOSpipeDescription: 60V, N-Channel 220MOHM 4.5V Rated MOSFET49345+$2.157325+$1.997550+$1.8856100+$1.8377500+$1.80572500+$1.76585000+$1.749810000+$1.7258 -
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Category: MOSpipeDescription: N-CHANNEL 20V (D-S) MOSFET90925+$1.961625+$1.816350+$1.7145100+$1.6710500+$1.64192500+$1.60565000+$1.591010000+$1.5692
